SISD0450ST170i20_A01 - SwissSEM IGBT power module - dual / phase-leg

Tech-Specs

ST-type phase leg IGBT module

ST-Type 1.7kV

• SISD0450ST170i20_A01
• SISD0200ST170i20_A01

Maximum ratings

Parameter	Value
Collector-emitter voltage	1700 V
DC collector current​	450 A
Max. junction operating temperature	175 °C​

IGBT

Parameter	Value
Collector emitter saturation voltage (Tvj = 125°C)	2.0 V
Turn-off energy​ (VCC = 900 V, IC = 450 A, RG = 2.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	174 mJ
Turn-on energy​ (VCC = 900 V, IC = 450 A, RG = 4 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	245 mJ

Diode

Parameter	Value
Forward voltage drop (Tvj = 125°C)	1.95 V
Reverse recovery ​(VR = 900 V, IF = 450 A, dI/dt = 9180 A/µs, RG = 4 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	120 mJ

Package Properties

Parameter	Value
IGBT thermal resistance ​junction to case Rth(j-c)_IGBT	0.060 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode	0.102 K/W
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch	0.032 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch	0.039 K/W

Dimensions

Parameter	Value
L x W x H	106 x 62 x 30.9 mm³
Clearance distance terminal to base​	23 mm
Clearance distance terminal to terminal​	11 mm
Surface creepage distance terminal to base​	29 mm
Surface creepage distance terminal to terminal​	23 mm
Mass​	310 g

Outline drawing

Outline

Schematics