Parameter | Value |
---|---|
Collector-emitter voltage | 1700 V |
DC collector current | 450 A |
Max. junction operating temperature | 175 °C |
Parameter | Value |
---|---|
Collector emitter saturation voltage (Tvj = 125°C) | 1.8 V |
Turn-off energy (VCC = 600 V, IC = 800 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) | 65 mJ |
Turn-on energy (VCC = 600 V, IC = 800 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) | 54 mJ |
Parameter | Value |
---|---|
Forward voltage drop (Tvj = 125°C) | 2.05 V |
Reverse recovery (VR = 600 V, IF = 800 A, dI/dt = 5300 A/µs, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) | 24mJ |
Parameter | Value |
---|---|
IGBT thermal resistance junction to case Rth(j-c)_IGBT | 0.057 K/W |
Diode thermal resistance junction to case Rth(j-c)_Diode | 0.098 K/W |
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch | 0.032 K/W |
Diode thermal resistance case to heatsink Rth(c-s)_Diode per switch | 0.039 K/W |
Parameter | Value |
---|---|
L x W x H | 106 x 62 x 30.9 mm³ |
Clearance distance terminal to base | 23 mm |
Clearance distance terminal to terminal | 11 mm |
Surface creepage distance terminal to base | 29 mm |
Surface creepage distance terminal to terminal | 23 mm |
Mass | 340 g |
Outline drawing
Schematic circuit diagram