SCD0060C120s24 SwissSEM SiC Schottky Barrier Diode for power module assembly

Tech-Specs

Discrete trial

• s24 high surge generation diode design
• positive temperature coefficient
• easy paralleling

TO247

• TO2478

MOSFET

MOSFET

Parameter	Value
Repetitive peak reverse voltage	1200 V
Continuous forward current	60 A

Dimensions

Parameter	Value
Length	4.66 mm
Width	4.65 mm