SwissSEM FP-type three-level IGBT i23 power module with SiC SBD as neutral point diode
| 参数 | 价值 |
|---|---|
| 集电极-发射极电压 | 1050 V |
| 集电极直流电流 | 650 A |
| 最高运行结温 | 175 °C |
| 参数 | 价值 |
|---|---|
| IGBT结-壳热阻 Rth(j-c)_IGBT T1 - T4 | 0.074 K/W |
| 二极管结-壳热阻 Rth(j-c)_Diode D1 & D4 | 0.145 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode D2 & D3 | 0.132 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode D5 & D6 | 0.193 K/W |
| IGBT壳到散热器热阻 Rth(c-s)_IGBT per switch T1 - T4 | 0.030 K/W |
| 二极管壳到散热器热阻 Rth(c-s)_Diode per switch D1 - D4 | 0.045 K/W |
| Diode thermal resistance case to heatsink Rth(c-s)_Diode per switch D5 & D6 | 0.065 K/W |
| 参数 | 价值 |
|---|---|
| 长 x 宽 x 高 | 113 x 62 x 17.3 mm³ |
| 重量 | 250 g |
Outline
Schematics
