SIST0650FP105i23_A02

FP-type three-level IGBT power module

Parameter	Value
Collector-emitter voltage	1050 V
Implemented DC collector current T1 - T4	650 A
Max. junction operating temperature	175 °C

Parameter	Value
IGBT thermal resistance junction to case R_{th(j-c)_IGBT} T1 - T4	0.074 K/W
Diode thermal resistance junction to case R_{th(j-c)_Diode} D1 & D4	0.145 K/W
Diode thermal resistance junction to case R_{th(j-c)_Diode} D2 & D3	0.132 K/W
Diode thermal resistance junction to case R_{th(j-c)_Diode} D5 & D6	0.193 K/W
IGBT thermal resistance case to heatsink R_{th(c-s)_IGBT} per switch T1 - T4	0.030 K/W
Diode thermal resistance case to heatsink R_{th(c-s)_Diode} per switch D1 - D4	0.045 K/W
Diode thermal resistance case to heatsink R_{th(c-s)_Diode} per switch D5 & D6	0.065 K/W

Parameter	Value
L x W x H	113 x 62 x 17.3 mm³
Mass	250 g

Outline

Schematics

SIST0650FP105i23_A02v3

Datasheet

2026-06-23 | 0.71MB | EN

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FP type application note

2026-06-23 | 0.98MB

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MDS SIST0650 FP105i23 v1 0

Material datasheet

2026-06-23 | 0.09MB | EN

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DRW0418v1

Outline Drawing

2026-03-31 | 0.23MB | EN

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DRW0402v2

Pin-position-drawing

2026-03-31 | 0.18MB | EN

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DRW0403v1

Chip-position drawing

2026-03-31 | 0.19MB | EN

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AN 000011 L Product Naming Rule Public Article Number directive

2026-06-23 | 0.66MB

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SIST0650FP105i23_A02v3

Datasheet

2026-06-23 | 0.8MB | EN/CN

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ZIP-File

2026-06-23 | 3.49MB

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