SwissSEM FP-type three-level IGBT i23 power module with SiC SBD as neutral point diode
| 参数 | 价值 |
|---|---|
| 集电极-发射极电压 | 1050 V |
| 集电极直流电流 | 650 A |
| 最高运行结温 | 175 °C |
| 参数 | 价值 |
|---|---|
| Collector(-emitter) breakdown voltage VCEsat (IC = 1800A, VGS = 15V, Tvj = 25°C) | 1.75 V |
| Turn-off switching energy - Eoff (VCC = 900V, IC = 1800A, RG = 0.5 Ohm, VGS = +/-15V, Tvj = 125°C) | 560 mJ |
| Turn-on switching energy - Eon (VCC = 900V, IC = 1800A, RG = 0.5 Ohm, VGS = +/-15V, Tvj = 125°C) | 510 mJ |
| 参数 | 价值 |
|---|---|
| Forward voltage VF (IC = 1800A, Tvj = 25°C) | 2 V |
| Reverse Recover Energy - Err (VCC = 900V, IC = 1800A, RG = 0.5 Ohm, VGS = +/-15V, Tvj = 125°C) | 280 mJ |
| 参数 | 价值 |
|---|---|
| IGBT结-壳热阻 Rth(j-c)_IGBT T1 - T4 | 0.074 K/W |
| 二极管结-壳热阻 Rth(j-c)_Diode D1 & D4 | 0.145 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode D2 & D3 | 0.132 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode D5 & D6 | 0.193 K/W |
| 参数 | 价值 |
|---|---|
| 长 x 宽 x 高 | 113 x 62 x 17.3 mm³ |
| 重量 | 250 g |
Outline
Schematics
