Industrial XP-type package featuring i26 ultra-low loss micro pattern trench IGBT chipset for 2300V
| Parameter | Value |
|---|---|
| Collector-emitter voltage | 2300 V |
| DC collector current | 1600 A |
| Max. junction operating temperature | 175 °C |
| Parameter | Value |
|---|---|
| Collector(-emitter) breakdown voltage VCEsat (IC = 1600A, VGS = 15V, Tvj = 25°C) | 1.9 V |
| Turn-off switching energy - Eoff (VCC = 1500V, IC = 1600A, RG = 12 Ohm, VGS = +/-15V, Tvj = 125°C) | 1150 mJ |
| Turn-on switching energy - Eon (VCC = 1500V, IC = 1600A, RG = 0.5 Ohm, VGS = +/-15V, Tvj = 125°C) | 870 mJ |
| Parameter | Value |
|---|---|
| Forward voltage VF (IC = 1600A, Tvj = 25°C) | 2.55 V |
| Reverse Recover Energy - Err (VCC = 1500V, IC = 1600A, RG = 0.5 Ohm, VGS = +/-15V, Tvj = 125°C) | 500 mJ |
| Parameter | Value |
|---|---|
| IGBT thermal resistance junction to case Rth(j-c)_IGBT | 0.016 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode | 0.027 K/W |
| IGBT thermal resistance junction to case Rth(c-s)_IGBT | 0.0144 K/W |
| Diode thermal resistance junction to case Rth(c-s)_Diode | 0.0172 K/W |
| Parameter | Value |
|---|---|
| L x W x H | 140 x 100 x 40 mm³ |
| Mass | 1100 g |
Outline
Schematics
