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SCD0060C120s24 SwissSEM SiC Schottky Barrier Diode for power module assembly

1200V

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SCD0060C120s24

SiC Schottky Barrier diode 1200 V

s24 high surge generation diode design
positive temperature coefficient
easy paralleling

SEM TYP Diode RGB Blue

SiC Schottky Barrier Diode 1.2kV

MOSFET

Parameter	Value
Repetitive peak reverse voltage	1200 V
Continuous forward current	60 A

Parameter	Value
Length	4.66 mm
Width	4.65 mm

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SCD0060C120s24v1

Datasheet

2026-06-19 | 0.24MB | EN

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SCD0060C120s24v1

产品规格书

2026-06-19 | 0.29MB | EN / CN

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ZIP-File

2026-06-19 | 0.48MB

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