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SCS0009C075m22 SwissSEM SiC-MOSFET die for power module assembly

750V and 9 mOhm rated SiC-MOSFET die with m22-technology

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SCS0009C075m22

SiC MOSFET 750 V and 9 mOhm Rdson

positive temperature coefficient
easy paralleling

Si C MOSFET wafer 150

SiC MOSFET 750V

MOSFET

Parameter	Value
Drain-source voltage	750 V
R_DS(on) (I_D = 80 A, V_GS = 18 V, T_vj = 25°C)	9 mOhm

Parameter	Value
Length	5 mm
Width	5 mm

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SCS0009C075m22v1

Datasheet

2026-06-19 | 0.34MB | EN

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SCS0009C075m22v1

产品规格书

2026-06-19 | 0.44MB | EN/CN

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ZIP-File

2026-06-19 | 0.68MB

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