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SCS0013C120m23 SwissSEM SiC-MOSFET die for power module assembly

1200V and 13 mOhm rated SiC-MOSFET die with m23-technology

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SCS0013C120m23

SiC MOSFET 1200 V and 13 mOhm Rdson

  • positive temperature coefficient
  • easy paralleling

SiC MOSFET 1.2kV

MOSFET

Parameter Value
Drain-source voltage 1200 V
RDS(on) (ID = 100 A, VGS = 18 V, Tvj = 25°C) 13 mOhm
Parameter Value
Length 5.0 mm
Width 5.7 mm

Outline drawing

Outline drawing
DOWNLOADS
  • SCS0013C120m23v7
    Datasheet
    2026-06-19 | 0.39MB | EN
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  • AN 000011 L Product Naming Rule Public Article Number directive
    2026-06-19 | 0.66MB
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  • SCS0013C120m23v7
    Datasheet
    2026-06-19 | 0.47MB | EN/CN
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  • Download all
    ZIP-File
    2026-06-19 | 1.39MB
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