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SCS0030C230m23 SwissSEM SiC-MOSFET die for power module assembly

2300V and 30 mOhm rated SiC-MOSFET die with m23-technology

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SCS0030C230m23

SiC MOSFET 2300 V and 30 mOhm Rdson

  • positive temperature coefficient
  • easy paralleling
Si C MOSFET wafer

SiC MOSFET 2.3kV

MOSFET

Parameter Value
Drain-source voltage 2300 V
RDS(on) (ID = 80 A, VGS = 18 V, Tvj = 25°C) 30 mOhm
Parameter Value
Length 5.0 mm
Width 5.0 mm

Outline drawing

Outline drawing
DOWNLOADS
  • SCS0030C230m23v1
    Datasheet
    2026-07-10 | 0.26MB | EN
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  • AN 000011 L Product Naming Rule Public Article Number directive
    2026-07-10 | 0.66MB
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  • SCS0030C230m23v1
    Datasheet
    2026-07-10 | 0.33MB | EN/CN
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    ZIP-File
    2026-07-10 | 1.14MB
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