Industrial XP-type package featuring m23 generation ultra-low RDSon SiC-MOSFET for 2300V
| Parameter | Value |
|---|---|
| Drain-source breakdown voltage V(BR)DSS | 2300 V |
| Continuous drain and source current | 1350 A |
| Max. junction operating temperature | 175 °C |
MOSFET
| Parameter | Value |
|---|---|
| Static drain-source on-state resistance RDSon (ID = 2000A, VGS = 18V, Tvj = 25°C) | 1.1 mOhm |
| Turn-off switching energy - Eoff (VCC = 1500V, ID = 2000A, RG = Ohm, VGS = -5V/+18V, Tvj = 125°C) | 400 mJ |
| Turn-on switching energy - Eon (VCC = 1500V, IC = 2000A, RG = Ohm, VGS =-5V/+18V, Tvj = 125°C) | 470 mJ |
| Drain-source reverse voltage - VDS (ID = -2000A, VGS = -5V, Tvj = 25°C) | 5.5 V |
| MOSFET Forward Recover Energy - Err (VR = 1500V, ID = 2000A, RG = Ohm, VGS = -5/+18V, Tvj = 125°C) | mJ |
| Parameter | Value |
|---|---|
| Thermal resistance junction to case Rth(j-c) | 0.018 K/W |
| Thermal resistance case to heatsink Rth(c-s) | 0.012 K/W |
| Parameter | Value |
|---|---|
| L x W x H | 140 x 100 x 40 mm³ |
| Mass | 1100 g |
Outline
Schematics
