Maximum ratings

Parameter	Value
VDSS (at Tj = 25°C)	1200 V
VGSS	-10 to +22 V
Max. junction operating temperature	175 °C

MOSFET

MOSFET

Parameter	Value
rDSon (at Tj = 25°C)	2.05 mOhm
rDSon (at Tj = 150°C)	3.8 mOhm
Turn-off switching energy (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -4 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C)	20 mJ
Turn-on switching energy (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -4 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C)	13 mJ

Diode

Parameter	Value
Forward voltage (ID = -500 A, VGS = 18 V, Tj = 25°C)	1 V
Peak reverse recovery current (VR = 800 V, ISD = 500 A, dI/dt = 15 kA/µs, RG = 3 Ω, VGS = -4 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C)	10.9 mJ

Package Properties

Parameter	Value
Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar, three modules)	0.110 K/W
Module stray inductance (per switch)	4.5 nH

Mechanical Properties

Parameter	Value
Clearance distance in air (terminal to base)	7.1 mm
Clearance distance in air (terminal to terminal)	4.0 mm
Surface creepage distance (terminal to base and terminal to terminal)	8.0 mm
Mass	65 g

Outline drawing

Outline

Schematic