Automotive 1200V SiC-MOSFET three-phase power module with 2mOhm on-resistance
| Parameter | Value |
|---|---|
| VDSS (at Tj = 25°C) | 1200 V |
| VGSS | -10 to +22 V |
| Max. junction operating temperature | 175 °C |
MOSFET
| Parameter | Value |
|---|---|
| rDSon (at Tj = 25°C) | 2.1 mOhm |
| rDSon (at Tj = 175°C) | 3.8 mOhm |
| Turn-off switching energy (VCC = 800 V, ID = 500 A, RG = 7 Ω, VGS = -4 / +18 V, Ls = 30 nH, inductive load, Tj = 125°C) | 39 mJ |
| Turn-on switching energy (VCC = 800 V, ID = 500 A, RG = 5 Ω, VGS = -4 / +18 V, Ls = 30 nH, inductive load, Tj = 125°C) | 19 mJ |
| Parameter | Value |
|---|---|
| Forward voltage (ID = -500 A, VGS = 18 V, Tj = 25°C) | 1 V |
| Peak reverse recovery current (VR = 800 V, ISD = 500 A, dI/dt = 14 kA/µs, RG = 3 Ω, VGS = -2 / +18 V, Ls = 30 nH, inductive load, Tj = 125°C) | 7.7 mJ |
| Parameter | Value |
|---|---|
| Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar) | 0.11 K/W |
| Module stray inductance (per switch) | 8.5 nH |
| Parameter | Value |
|---|---|
| Clearance distance in air (terminal to base and terminal to terminal) | 4.5 mm |
| Surface creepage distance (terminal to base and terminal to terminal) | 9.0 mm |
| Mass | 720 g |
Outline
Schematics
