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SIS0200C170i23 SwissSEM IGBT die for power module assembly

1700V and 200A rated IGBT-die with i23-technology featuring a fine pattern trench cell

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SIS0200C170i23

Silicon IGBT 1700 V and 200 A rated current

  • i23 ultra-low-loss micro pattern Trench IGBT chip-set
  • Soft switching for a broad application range due to best turn-off controllability
  • positive temperature coefficient
  • easy paralleling
I20 21

IGBT 1.7kV i23 technology

Parameter Value
Collector-emitter voltage 1700 V
DC collector current​ 200 A
Parameter Value
Length 12.4 mm
Width 11.6 mm
DOWNLOADS
  • SIS0200C170i23v1
    Datasheet
    2026-06-19 | 0.4MB | EN
    URL copied to clipboard
  • AN 000011 L Product Naming Rule Public Article Number directive
    2026-06-19 | 0.66MB
    URL copied to clipboard
  • SIS0200C170i23v1
    Datasheet
    2026-06-19 | 0.47MB | EN/CN
    URL copied to clipboard
  • Download all
    ZIP-File
    2026-06-19 | 1.4MB
    URL copied to clipboard

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