Industrial 62mm (ST-type) standard package featuring i20 ultra-low loss fine pattern trench IGBT chipset for 1200V and twice 1000A
| Parameter | Value |
|---|---|
| Collector-emitter voltage | 1200 V |
| DC collector current | 1000 A |
| Max. junction operating temperature | 175 °C |
| Parameter | Value |
|---|---|
| Collector emitter saturation voltage (Tvj = 125°C) | 1.75 V |
| Turn-off energy (VCC = 600 V, IC = 1000 A, RG = 0.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 137 mJ |
| Turn-on energy (VCC = 600 V, IC = 1000 A, RG = 0.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 101 mJ |
| Parameter | Value |
|---|---|
| Forward voltage drop (Tvj = 125°C) | 1.7 V |
| Reverse recovery (VR = 600 V, IF = 1000 A, dI/dt = 9355 A/µs, RG = 0.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 97 mJ |
| Parameter | Value |
|---|---|
| IGBT thermal resistance junction to case Rth(j-c)_IGBT | 0.039 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode | 0.065 K/W |
| IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch | 0.028 K/W |
| Diode thermal resistance case to heatsink Rth(c-s)_Diode per switch | 0.033 K/W |
| Parameter | Value |
|---|---|
| L x W x H | 106 x 62 x 30.9 mm³ |
| Clearance distance terminal to base | 23 mm |
| Clearance distance terminal to terminal | 11 mm |
| Surface creepage distance terminal to base | 29 mm |
| Surface creepage distance terminal to terminal | 23 mm |
| Mass | 310 g |
Outline
Schematics
