SISS0600EVD120i25

EVD-Type three-phase 1.2kV Si-IGBT automotive power-module

  • i25 generation Si-IGBT chips
  • Low switching losses
  • Low inductance module < 9nH
  • Tvj_op = 175°C
  • 4.2kV DC 1 sec insulation
  • Compact design
  • Direct cooled PinFin baseplate
  • High performance Si3N4 ceramic substrates
  • Guiding elements for PCB and cooler assembly
  • Integrated NTC temperature sensor
  • Solder pin to PCB contact technology
  • RoHS & REACH compliant
EVD Si C type photo

EVD-type

Parameter Value
VCES (at Tj = 25°C) 1200 V
Max. junction operating temperature 175 °C
Parameter Value
VCEsat at Tvj = 150 °C 1.6 V
Eoff (at VCC = 600 V, IC = 600 A, RG = TBD, VGE = 15 V, Ls = 35 inductive load, Tj = 150°C) 59 mJ
Eon (at VCC = 600 V, IC = 600 A, RG = TBD, VGE = 15 V, Ls = 35 inductive load, Tj = 150°C) 49 mJ
Parameter Value
Forward voltage VF (IF = 450A, Tvj = 150 °C) 1.9 V
Erec (at VCC = 600 V, IC = 600 A, RG = TBD, VGE = 15 V, Ls = 35 inductive load, Tj = 150°C) 32 mJ
Parameter Value
Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar) 0.11 K/W
Module stray inductance (per switch) 8.5 nH
Parameter Value
Clearance distance in air (terminal to base and terminal to terminal) 4.5 mm
Surface creepage distance (terminal to base and terminal to terminal) 9.0 mm
Mass 720 g

Outline

Outline drawing

Schematics

Outline drawing
DOWNLOADS
  • DRW0209v1
    Outline Drawing
    2026-06-23 | 0.33MB | EN
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  • DRW0428v1
    Pin position drawing
    2026-06-23 | 0.19MB | EN
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  • DRW0429v1
    Chip position drawing
    2026-06-23 | 0.18MB | EN
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  • AN 000011 L Product Naming Rule Public Article Number directive
    2026-06-23 | 0.66MB
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