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SCS014HG120M24F - m24 Generation 1200V SiC MOSFET (n-channel enhancement)

1200V

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TO247N-4LB SCS014HG120M24F

m22 Generation 1200V SiC MOSFET (n-channel enhancement)- TO-247-4LB

High blocking voltage with low on-resistance
Very low switching losses
High‑Reliability Qualification

TO247 4 LB

TO247

MOSFET

Parameter	Value
Drain source voltage	1200 V
Drain-source on-state resistance (I_D = 100 A, V_GS = 18V, T_vj = 25 °C)	14 mOhm

Outline drawing

Outline drawing

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SCS014HG120M24Fv1

Datasheet

2026-08-18 | 0.7MB | EN/CN

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ZIP-File

2026-08-18 | 0.6MB

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