SCS0009C120m24

SiC MOSFET 1200 V and 9 mOhm Rdson

  • positive temperature coefficient
  • easy paralleling
Si C MOSFET wafer 150

SiC MOSFET 1.2kV

MOSFET

Parameter Value
Drain-source voltage 1200 V
RDS(on) (ID = 100 A, VGS = 18 V, Tvj = 25°C) 9 mOhm
Parameter Value
Length 5.2 mm
Width 6.0 mm

Outline drawing

Outline drawing
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