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SCS0009C120m24
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SCS0009C120m24 SwissSEM SiC-MOSFET die for power module assembly
1200V and 9 mOhm rated SiC-MOSFET die with m24-technology
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Product Overview
SCS0009C120m24
Downloads
Inquiry
SCS0009C120m24
SiC MOSFET 1200 V and 9 mOhm Rdson
positive temperature coefficient
easy paralleling
SiC MOSFET 1.2kV
Select product module
SCS0009C120m24
SCS0013C120m23
MOSFET
MOSFET
Parameter
Value
Drain-source voltage
1200 V
R
DS(on)
(I
D
= 100 A, V
GS
= 18 V, T
vj
= 25°C)
9 mOhm
Dimensions
Parameter
Value
Length
5.2 mm
Width
6.0 mm
Outline drawing
Outline drawing
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2026-08-27 | 0.66MB
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2026-08-27 | 0.63MB
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