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SIS0150C170i23 SwissSEM IGBT die for power module assembly

1700V and 150A rated IGBT-die with i23-technology featuring a fine pattern trench cell

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SIS0150C170i23

Silicon IGBT 1700 V and 150 A rated current

i23 ultra-low-loss micro pattern Trench IGBT chip-set
Soft switching for a broad application range due to best turn-off controllability
positive temperature coefficient
easy paralleling

I20 21

IGBT 1.7kV i23 technology

Parameter	Value
Collector-emitter voltage	1700 V
DC collector current	150 A

Parameter	Value
Length	10.6 mm
Width	10.6 mm

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SIS0150C170i23v1

Datasheet

2026-06-19 | 0.41MB | EN

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AN 000011 L Product Naming Rule Public Article Number directive

2026-06-19 | 0.66MB

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SIS0150C170i23v1

Datasheet

2026-06-19 | 0.48MB | EN/CN

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ZIP-File

2026-06-19 | 1.41MB

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