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SIS0200C120i25 SwissSEM IGBT die for power module assembly

1200V and 200A rated IGBT-die with i25-technology featuring a micro pattern trench cell

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SIS0200C120i25

Silicon IGBT 1200 V and 200 A rated current

  • i25 ultra-low-loss micro pattern Trench IGBT chipset
  • Soft switching for a broad application range due to best turn-off controllability
  • positive temperature coefficient
  • easy paralleling
I20 21

IGBT 1.2kV i25-technology

Parameter Value
Collector-emitter voltage 1200 V
DC collector current​ 200 A
Parameter Value
Length 11 mm
Width 9.7 mm
DOWNLOADS
  • SIS0200C120i25v2
    Datasheet
    2026-06-26 | 0.31MB | EN
    URL copied to clipboard
  • AN 000011 L Product Naming Rule Public Article Number directive
    2026-06-26 | 0.66MB
    URL copied to clipboard
  • SIS0200C120i25v2
    Datasheet
    2026-06-26 | 0.38MB | EN/CN
    URL copied to clipboard
  • Download all
    ZIP-File
    2026-06-26 | 1.24MB
    URL copied to clipboard

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