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SIS0200C120i25 SwissSEM IGBT die for power module assembly

1200V and 200A rated IGBT-die with i25-technology featuring a micro pattern trench cell

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SIS0200C120i25

Silicon IGBT 1200 V and 200 A rated current

i25 ultra-low-loss micro pattern Trench IGBT chipset
Soft switching for a broad application range due to best turn-off controllability
positive temperature coefficient
easy paralleling

I20 21

IGBT 1.2kV i25-technology

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current	200 A

Parameter	Value
Length	11 mm
Width	9.7 mm

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SIS0200C120i25v2

Datasheet

2026-08-26 | 0.31MB | EN

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AN 000011 L Product Naming Rule Public Article Number directive

2026-08-26 | 0.66MB

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SIS0200C120i25v2

Datasheet

2026-08-26 | 0.38MB | EN/CN

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ZIP-File

2026-08-26 | 1.24MB

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