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SIS0250C120i20 SwissSEM IGBT die for power module assembly

1200V and 250A rated IGBT-die with i20-technology featuring a fine pattern trench cell

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SIS0250C120i20

Silicon IGBT 1200 V and 250 A rated current

i20 ultra-low loss fine pattern Trench IGBT chipset
positive temperature coefficient
easy paralleling

I20 21

IGBT 1.2kV i20 & i21

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current	250 A

Parameter	Value
Length	12.1 mm
Width	15.7 mm

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SIS0250C120i20v2

Datasheet

2026-07-10 | 0.28MB | EN

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AN 000011 L Product Naming Rule Public Article Number directive

2026-07-10 | 0.66MB

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SIS0250C120i20v2

Datasheet

2026-07-10 | 0.34MB | EN/CN

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ZIP-File

2026-07-10 | 1.17MB

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