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SIS0250C120i20 SwissSEM IGBT die for power module assembly

1200V and 250A rated IGBT-die with i20-technology featuring a fine pattern trench cell

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SIS0250C120i20

Silicon IGBT 1200 V and 250 A rated current

  • i20 ultra-low loss fine pattern Trench IGBT chipset
  • positive temperature coefficient
  • easy paralleling
I20 21

IGBT 1.2kV i20 & i21

Parameter Value
Collector-emitter voltage 1200 V
DC collector current​ 250 A
Parameter Value
Length 12.1 mm
Width 15.7 mm
DOWNLOADS
  • SIS0250C120i20v2
    Datasheet
    2026-07-10 | 0.28MB | EN
    URL copied to clipboard
  • AN 000011 L Product Naming Rule Public Article Number directive
    2026-07-10 | 0.66MB
    URL copied to clipboard
  • SIS0250C120i20v2
    Datasheet
    2026-07-10 | 0.34MB | EN/CN
    URL copied to clipboard
  • Download all
    ZIP-File
    2026-07-10 | 1.17MB
    URL copied to clipboard

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