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SCS027HG065M22E - m22 Generation 650V SiC MOSFET (n-channel enhancement)

650V

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TO247N-4LB SCS027HG065M22E

m22 Generation 650V SiC MOSFET (n-channel enhancement)- TO-247-4LB

High blocking voltage with low on-resistance
Very low switching losses
High‑Reliability Qualification

TO247 4 LB

TO247

MOSFET

Parameter	Value
Drain source voltage	650 V
Drain-source on-state resistance (I_D = 30 A, V_GS = 18V, T_vj = 27 m Ohm)	27 mOhm

Outline drawing

Outline drawing

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SCS027HG065M22Ev1

Datasheet

2026-08-18 | 0.69MB | EN/CN

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ZIP-File

2026-08-18 | 0.6MB

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